www.onsemi.com ?semiconductor components industries, llc, 2015 march 2015 - rev. 1 tf262th n-channel jfet C 20v, 140 to 350 a, 0.95ms publication order number: tf262th/d 1 features ? low output noise voltage : v no = -- 112db typ. (v cc =2v, r l =2.2k , cin=5pf) ? ultrasmall package facilitates miniaturization in end products : 1.4mm 1.2mm 0.34mm ? especially suited for use in electret condenser microphone for audio equipments and telephones ? adoption of fbet process ? halogen free compliance specifcations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit gate to drain voltage v gdo --20 v gate current i g 10 ma drain current i d 1 ma allowable power dissipation p d 100 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c this product is designed to esd immunity < 200v * , so please take care when handling. * machine model packing type : tl electrical connection marking tl 1 2 3 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TF262TH-4-TL-H tf262th-5-tl-h 1 : drain 2 : source 3 : gate sot-623 / vtfp ordering information see detailed ordering and shipping information on page 6 of this data sheet. lot no. lot no. l r a n k 3 1 2
tf262th www.onsemi.com 2 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate to drain breakdown voltage v (br)gdo i g =--100 a --20 v cutoff voltage v gs(off) v ds =2v, i d =1 a --0.2 --0.5 --1.0 v drain current i dss v ds =2v, v gs =0v 140* 350* a forward transfer admittance | yfs | v ds =2v, v gs =0v, f=1khz 0.5 0.95 ms input capacitance ciss v ds =2v, v gs =0v, f=1mhz 3.5 pf reverse transfer capacitance crss v ds =2v, v gs =0v, f=1mhz 0.65 pf [ta=25c, v cc =2.0v, r l =2.2k , cin=5pf, see specifed test circuit.] voltage gain gv v in =10mv, f=1khz --1.5 db reduced voltage characteristic d gvv v in =10mv, f=1khz, v cc =2.0v 1.5v --0.8 --2.0 db frequency characteristic d gvf f=1khz to 110hz --1.0 db total harmonic distortion thd v in =30mv, f=1khz 0.5 % output noise voltage v no v in =0v, a curve -- 112 db 7kh 7)7+lvfodvvlhg, dss as follows : (unit : a) marking l4 l5 rank 4 5 , dss 140 to 240 210 to 350 test circuit osc 5pf + 33f 2.2k v cc =2.0v v cc =1.5v v vo ltage gain frequency characteristic distortion reduced v oltage characteristic vtvm thd i d - - v ds drain to source vo ltage, v ds - - v udluuhw, d - - a i d - - v gs gate to source vo ltage, v gs - - v udluuhw, d - - a 04 5 123 300 200 250 100 50 150 350 250 50 150 0 ,7 - -0.1v - -0.2v - -0.3v -- 0.4v - -0.8 - -0.6 - -0.4 - -0.2 - -0.1 0 - -0.7 - -0.5 - -0.3 400 300 200 100 0 v gs =0v ,7 v ds =2v , dss =350 a 250 a 150 a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
tf262th www.onsemi.com 3 v gs (of f) - - i dss | yfs | - - i dss ciss - - v ds crss - - v ds drain current, i dss - - a forward tr ansfer admittance, | y fs | - - ms drain current, i dss - - a cutoff voltage, v gs (off) - - v drain to source vo ltage, v ds - - v input capacitance, ciss - - pf drain to source vo ltage, v ds - - v reverse tr ansfer capacitance, crss - - pf i d - - v gs gate to source vo ltage, v gs - - v drain current, i d - - a g v - - i dss drain current, i dss - - a vo ltage gain, g v - - db g v - - cin electret capacitance, cin - - pf vo ltage gain, g v - - db g v - - v cc supply v oltage, v cc - - v vo ltage gain, g v - - db 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds =2v i d =1a 0.6 1.0 0.9 0.8 0.7 1.1 1.2 100 200 300 350 400 150 250 it16228 100 200 300 400 150 250 350 - -3.5 - -2.5 - -1.5 - -2.0 - -1.0 - -3.0 - -0.5 100 200 300 400 150 250 350 it16229 it16230 v ds =2v v gs =0v f=1khz 10 7 5 3 2 1.0 1.0 0.1 10 23 23 57 57 v gs =0v f=1mhz 1.0 0.1 10 7 5 3 2 7 5 3 2 1.0 0.1 10 2 23 57 35 7 it16231 v gs =0v f=1mhz v ds =2v t a=7 5 c 25 c - -25 c it16232 g v : v cc =2v v in =10mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v 400 350 250 50 150 - -0.7 - -0.5 - -0.6 - -0.4 - -0.3 - -0.2 - -0.1 0 300 200 100 0 it16227 0 12346 5 - -10 -- 8 -- 6 -- 4 -- 2 0 2 it16233 it16234 g v : v in =10mv f=1khz r l =2.2k cin=5pf i dss =350 a 250a 150 a 02 46 81 6 12 14 10 - -14 - -10 - -12 -- 8 -- 6 0 -- 4 -- 2 2 4 g v : v cc =2v v in =10mv f=1khz r l =2.2k i dss =350a 250 a 150 a
tf262th www.onsemi.com 4 drain current, i dss - - a to tal harmonic distortion, thd - - % thd - - v in input v oltage, v in - - mv to tal harmonic distortion, thd - - % p d - - t a ambient t emperature, ta - - c allowable power dissipation, p d - - mw dg vv - - i dss drain current, i dss - - a reduced v oltage characteristic, dg vv - - db 0 it16237 0.4 0.6 0.8 0.2 1.0 thd : v cc =2v v in =30mv f=1khz r l =2.2k c in=5pf i dss : v ds =2v 10 1.0 7 5 3 2 7 5 3 2 0.1 05 0 100 150 200 it16236 - -2.5 - -2.0 - -1.5 - -1.0 - -0.5 0 dg vv : v cc =2v1.5v v in =10mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v thd : v cc =2v f=1khz r l =2.2k cin=5pf 100 200 300 400 150 250 350 100 200 300 400 150 250 350 it16235 i dss =150a 250a 350a 80 100 120 40 20 60 0 0 160 140 120 100 80 60 40 20 it16238 thd - - i dss
tf262th www.onsemi.com 5 package dimensions unit : mm TF262TH-4-TL-H, tf262th-5-tl-h recommended soldering footprint sot-623 / vtfp case 631a d issue o 0.5 0.4 0.45 0.45 0.45 0.45 1.1
tf262th www.onsemi.com 6 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to m ake changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaim s any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/o r specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal i njury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scill c and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ordering information device package shipping memo TF262TH-4-TL-H sot-623 / vtfp 8,000pcs. / tape and reel pb-free and halogen free tf262th-5-tl-h
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